Thermal Stability of AlGaN/GaN HEMTs Using High Work Function Pd-gate, Ir-gate, Ni-gate Designs
نویسندگان
چکیده
منابع مشابه
Threshold Voltage Control in Al0.72Ga0.28N/AlN/GaN HEMTs by Work-Function Engineering
The first demonstration of high-Al-composition (> 70%) AlGaN high electron mobility transistors (HEMTs) is reported. High electron mobility (∼1300 cm/Vs at room temperature) was achieved in novel high-Al-composition AlGaN 2-D electron gas structures. The threshold voltages (Vth) of Al0.72Ga0.28N/AlN/GaN HEMTs were shifted from −1.0 to −0.13 V by employing different gate metal stacks, Al/Au and ...
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AlGaN/GaN metal-oxide-semiconductor high electron mobility transistors (MOS-HEMTs) using La2O3 as gate oxide by electron-beam evaporated have been investigated and compared with the regular HEMTs [1]. The La2O3 thin film achieved a good thermal stability after 200°C, 400°C and 600°C post-deposition annealing due to its high binding energy (835.7 eV) characteristics. Our measurements have shown ...
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Based on fluoride-based plasma treatment of the gate region in AlGaN/GaN HEMTs and post-gate rapid thermal annealing (RTA), enhancement mode (E-mode) AlGaN/GaN HEMTs with low on-resistance and low knee-voltage were fabricated. The fabricated E-mode AlGaN/GaN HEMT with 1 μm-long gate exhibits a threshold voltage of 0.9 V, a kneevoltage of 2.2 V, a maximum drain current density of 310 mA/mm, a pe...
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A large–signal model of AlGaN/GaN HEMTs grown on sapphire substrate with gate width Wg = 2 × 150 μm and gate length Lg = 250 nm is presented. The equivalent circuit model accurately describes the sub–threshold region and takes into account the self–heating effects. The thermal resistance has been calculated analytically. The DC, small–signal and large– signal behaviour are accurately described ...
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تاریخ انتشار 2010